Tone inversion method and structure for selective contact via patterning

US10453751B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Xiaofeng Qiu · Ballston Lake, US
• Michael V. Aquilino · Wappingers Falls, US
• Patrick Carpenter · Saratoga Springs, US
• Jessica Dechene · Watervliet, US
• Ming Hao Tang · Ballston Lake, US
• Haigou Huang · Rexford, US
• Huy Cao · Rexford, US

Key dates

• Filing date: Feb 14, 2017
• Grant date: Oct 22, 2019
• Expiry date: Mar 17, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0147
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.