Ferroelectric non-volatile memory

US10453861B1 · kind B1 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Yingda Dong · San Jose, US
• Yangyin Chen · Leuven, BE
• Yukihiro Sakotsubo · Yokkaichi, JP

Key dates

• Filing date: Mar 28, 2018
• Grant date: Oct 22, 2019
• Expiry date: Mar 28, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A non-volatile storage element including a control gate, a tunneling layer, a charge storage region, and a blocking layer including a ferroelectric material. The tunneling layer is disposed between the control gate and the charge storage region, and the charge storage region is disposed between the tunneling layer and the blocking layer.