Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing method

US10453915B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andreas Meiser · Unterhaching, DE
• Karl-Heinz Bach · Puchheim, DE
• Christian Kampen · Munich, DE
• Dietmar Kotz · Moosburg, AT
• Andrew Christopher Graeme Wood · St. Jakob im Rosental, AT
• Markus Zundel · Egmating, DE

Key dates

• Filing date: Mar 30, 2018
• Grant date: Oct 22, 2019
• Expiry date: Mar 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.