Methods of manufacturing a power MOSFET
US10453929B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | May 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
A method of manufacturing a power metal oxide semiconductor field effect transistor includes: forming a field electrode in a field plate trench in a main surface of a semiconductor substrate; forming a gate trench in the main surface, the gate trench extending in a first direction parallel to the main surface; and for a gate electrode in the gate trench, the gate electrode being made of a gate electrode material that comprises a metal. The field plate trench is formed to have an extension length in the first direction which is less than double of an extension length of the field plate trench in a second direction, the second direction being perpendicular to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.