Semiconductor device having termination trench

US10453931B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Oliver Blank · Villach, AT
• Franz Hirler · Isen, DE
• Ralf Siemieniec · Villach, AT
• Li Juin Yip · Villach, AT

Key dates

• Filing date: Nov 9, 2018
• Grant date: Oct 22, 2019
• Expiry date: Nov 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region. Further it comprises a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the substrate structure and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure.