Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10454029B2 · kind B2 · utility
9Cited by
125References
22Claims
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Key dates
| Filing date | Nov 11, 2016 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Nov 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine-containing silicon precursor and nitrogen by atomic layer deposition and treating the silicon nitride film using a plasma at a temperature less than about 100° C. Methods and apparatuses are suitable for forming conformal, dense, low wet etch rate silicon nitride films as encapsulation layers over chalcogenide materials for memory applications.
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