Perpendicular magnetic tunnel junction memory cells having shared source contacts

US10460778B2 · kind B2 · utility

Assignee

• SPIN MEMORY, INC. · US

Inventors

• Kuk-Hwan Kim · Milpitas, US
• Dafna Beery · Palo Alto, US
• Gian Sharma · Fremont, US
• Marcin Gajek · Berkeley, US
• Kadriye Deniz Bozdag · Sunnyvale, US
• Girish Jagtiani · Santa Clara, US
• Eric Michael Ryan · Fremont, US
• Michail Tzoufras · Sunnyvale, US
• Amitay Levi · Cupertino, US
• Andrew J. Walker · Mountain View, US

Key dates

• Filing date: Dec 29, 2017
• Grant date: Oct 29, 2019
• Expiry date: Dec 29, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/1697
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A magnetic device, according to one approach, includes: a plurality of perpendicular magnetic tunnel junction (p-MTJ) cells, each p-MTJ cell having a transistor and a magnetic tunnel junction (MTJ) sensor. Moreover, each of the transistors includes a drain terminal, a source terminal, and a gate terminal. The magnetic device also includes: a first common word line coupled to the gate terminal of each transistor in a first subset of the plurality of p-MTJ cells, a first common bit line coupled to a first end of each MTJ sensor in a second subset of the plurality of p-MTJ cells, and a first common source line coupled to the drain terminal of each transistor in the first subset. A second end of each of the MTJ sensors in the second subset is coupled to the source terminal of each respective transistor in the second subset.