Naturally oxidized film removing method and naturally oxidized film removing device
US10460946B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is β-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.