Plasma processing method
US10460963B2 · kind B2 · utility
1Cited by
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6Claims
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Key dates
| Filing date | Aug 10, 2016 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Aug 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method of processing a processing target object, in which an organic film, a mask film and a resist film are stacked in sequence, by plasma includes a process of supplying a modifying gas, which is a H2 gas, a hydrogen halide gas, or a mixed gas containing a rare gas and a H2 gas or a hydrogen halide gas, into a chamber accommodating therein the processing target object in which a preset pattern is formed on the resist film; and modifying process of modifying the resist film of the processing target object by plasma of the modifying gas at a processing temperature equal to or less than −20° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.