Patent · US Active

Ferroelectric non-volatile memory

US10461095B2 · kind B2 · utility

1Cited by

0References

10Claims

0Family size

Assignee

Sandisk Technologies, Inc. · US

Inventors

Yingda Dong · San Jose, US
Yangyin Chen · Leuven, BE
Yukihiro Sakotsubo · Yokkaichi, JP

Key dates

Filing date	Mar 28, 2018
Grant date	Oct 29, 2019
Priority date	—
Expiry date	Mar 28, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/037

Abstract

A non-volatile storage element is provided that includes a control gate, a blocking layer including a ferroelectric material, a charge storage region, and a tunneling layer. The blocking layer is disposed between the control gate and the charge storage region, and the charge storage region is disposed between the tunneling layer and the blocking layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.