Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications
US10461242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element for Magnetic Random Access Memory. The magnetic memory element has improved reference layer magnetic pinning. The magnetic memory element has a magnetic free layer, a magnetic reference layer and a non-magnetic barrier layer located between the magnetic free layer and the magnetic reference layer. The magnetic reference layer has a magnetic moment that is pinned in a perpendicular orientation through exchange coupling with a synthetic antiferromagnetic structure that includes first and second magnetic structures and an antiferromagnetic exchange coupling structure located between the first and second magnetic structures. The antiferromagnetic exchange coupling structure includes a layer of Ru located between first and second layers of Pt. The Pt layers in the antiferromagnetic exchange coupling structure advantageously increases the magnetic proximity effect at both Ru interfaces, which extends the exchange coupling range of the antiferromagnetic exchange coupling layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.