High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
US10464187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/22
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.