Patent · US Active

Chemical mechanical polishing pad and polishing method

US10464188B1 · kind B1 · utility

1Cited by

3References

10Claims

0Family size

Assignee

Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventors

Matthew R. Gadinski · Nonatum Mills, US
Mohammad T. Islam · Middletown, US
Yi Guo · Shanghai, CN
George C. Jacob · Newark, US

Key dates

Filing date	Nov 6, 2018
Grant date	Nov 5, 2019
Priority date	—
Expiry date	Nov 6, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC08G18/7664
WIPO fieldMacromolecular chemistry, polymers
WIPO sectorChemistry

Abstract

The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.