Patent · US Active

Semiconductor device inspection of metallic discontinuities

US10466179B2 · kind B2 · utility

0Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 22, 2018
Grant dateNov 5, 2019
Priority date
Expiry dateMar 22, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N2021/8883
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Concepts presented herein relate to approaches for performing substrate inspection. In one aspect, the concepts relate to detecting anomalies or candidate defects on the substrate based on contrast in images obtained of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.