Patent · US Active

Method for producing a self-aligning masking layer

US10468248B2 · kind B2 · utility

0Cited by

0References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Heiko Aßmann · Dresden, DE
Felix Braun · Dresden, DE
Marcus Dankelmann · Radeberg, DE
Stefan Doering · Dresden, DE
Karsten Friedrich · Radebeul, DE
Udo Goetschkes · Dresden, DE
Andreas Greiner · Amöneburg, DE
Ralf Rudolf · Dresden, DE
Jens Schneider · Bielefeld, DE

Key dates

Filing date	Apr 12, 2017
Grant date	Nov 5, 2019
Priority date	—
Expiry date	Dec 2, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/102
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.