Jens Schneider
34Patents
6h-index
46Co-inventors
69Inventor score
Filing activity: Aug 10, 1998 → May 19, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9257523B2 | Avalanche diode having an enhanced defect concentration level and method of making the same | Electricity | 39 | Active |
| US9812438B2 | Avalanche diode having an enhanced defect concentration level and method of making the same | Electricity | 38 | Active |
| US10842174B2 | Method for producing biomass which has a high exopolysaccharide content | Emerging Cross-Sectional Technologies | 10 | Active |
| US7709896B2 | ESD protection device and method | Electricity | 10 | Active |
| US7875933B2 | Lateral bipolar transistor with additional ESD implant | Electricity | 8 | Active |
| US7838940B2 | Drain-extended field effect transistor | Electricity | 7 | Active |
| US7678632B2 | MuGFET with increased thermal mass | Electricity | 6 | Active |
| US7828987B2 | Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits | Electricity | 5 | Active |
| US7732834B2 | Semiconductor ESD device and method of making same | Electricity | 5 | Active |
| US9802868B2 | Shaped sintered ceramic bodies composed of Y2O3-stabilized zirconium oxide and process for producing a shaped sintered ceramic body composed of Y2O3-stabilized zirconium oxide | Emerging Cross-Sectional Technologies | 4 | Active |
| US6799588B1 | Apparatus for treating substrates | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7985983B2 | Semiconductor ESD device and method of making same | Electricity | 3 | Active |
| US8413101B2 | System and method for detecting parasitic thyristors in an integrated circuit | Physics | 2 | Active |
| US7087910B2 | Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method | Electricity | 2 | Expired |
| US7097947B2 | Method for correcting local loading effects in the etching of photomasks | Physics | 1 | Expired |
| US6110336A | High pressure magnetron cathode assembly and sputtering apparatus utilizing same | Electricity | 1 | Expired |
| US8072061B2 | Semiconductor device with cooling element | Electricity | 1 | Active |
| US8791547B2 | Avalanche diode having an enhanced defect concentration level and method of making the same | Electricity | 1 | Active |
| US10241391B2 | Method for processing a carrier, a carrier, an electronic device and a lithographic mask | Emerging Cross-Sectional Technologies | 0 | Active |
| US10468248B2 | Method for producing a self-aligning masking layer | Electricity | 0 | Active |
| US9613812B2 | Method for processing a carrier, a carrier, an electronic device and a lithographic mask | Emerging Cross-Sectional Technologies | 0 | Active |
| US8715910B2 | Method for exposing an area on a substrate to a beam and photolithographic system | Physics | 0 | Active |
| US11640908B2 | Method of implanting an implant species into a substrate at different depths | Electricity | 0 | Active |
| US9029049B2 | Method for processing a carrier, a carrier, an electronic device and a lithographic mask | Emerging Cross-Sectional Technologies | 0 | Active |
| US7910265B2 | Reticle for use in a semiconductor lithographic system and method for modifying the same | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.