Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10468251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jul 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.