Dai Ishikawa
49Patents
15h-index
57Co-inventors
84Inventor score
Filing activity: Feb 19, 1999 → Sep 16, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9029272B1 | Method for treating SiOCH film with hydrogen plasma | Electricity | 506 | Active |
| US8785215B2 | Method for repairing damage of dielectric film by cyclic processes | Electricity | 504 | Active |
| US8664627B1 | Method for supplying gas with flow rate gradient over substrate | Emerging Cross-Sectional Technologies | 502 | Active |
| US9190263B2 | Method for forming SiOCH film using organoaminosilane annealing | Electricity | 501 | Active |
| US9754779B1 | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches | Electricity | 464 | Active |
| US9353441B2 | Heating/cooling pedestal for semiconductor-processing apparatus | Electricity | 449 | Active |
| US9478414B2 | Method for hydrophobization of surface of silicon-containing film by ALD | Electricity | 448 | Active |
| US10014212B2 | Selective deposition of metallic films | Electricity | 374 | Active |
| US10468251B2 | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning | Electricity | 360 | Active |
| US10529554B2 | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches | Electricity | 359 | Active |
| US9803277B1 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 74 | Active |
| US6388951B1 | Audio apparatus | Physics | 71 | Expired |
| US9805974B1 | Selective deposition of metallic films | Electricity | 52 | Active |
| US10041166B2 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 51 | Active |
| US10480064B2 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 43 | Active |
| US10793946B1 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 15 | Active |
| US10410857B2 | Formation of SiN thin films | Electricity | 12 | Active |
| US7211497B2 | Method for fabricating semiconductor devices | Electricity | 6 | Expired |
| US7262101B2 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 2 | Expired |
| US6462263B2 | Information recording medium and reproducing apparatus therefor | Physics | 2 | Expired |
| US6794257B2 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 2 | Expired |
| US11133181B2 | Formation of SiN thin films | Electricity | 2 | Active |
| US8304654B2 | Coaxial cable | Chemistry; Metallurgy | 1 | Active |
| US8852463B2 | Metal fine particle for conductive metal paste, conductive metal paste and metal film | Emerging Cross-Sectional Technologies | 1 | Active |
| US10910262B2 | Method of selectively depositing a capping layer structure on a semiconductor device structure | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.