Device chip manufacturing method
US10468303B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Apr 18, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68336
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device chip manufacturing method includes a passivation film removing step of removing a passivation film along each division line, a wafer dividing step of performing plasma etching using a fluorine-based gas to the front side of a wafer in the condition where the passivation film is used as a mask, thereby dividing the wafer along the division lines, and a die attach film removing step of performing plasma etching using an oxygen-based gas to the front side of the wafer in the condition where the passivation film is used as a mask, thereby removing a part or the whole of a die attach film along each division line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.