Magnetic tunnel junctions and methods of fabrication thereof
US10468592B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jul 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure are for systems and methods for fabrication of a magnetic tunnel junction stack. This fabrication can occur via methods including one or more of (1) heating the substrate after the deposition of a buffer layer on the substrate, prior to deposition of a seed layer; (2) cooling the substrate after the deposition of a second pinning layer, before deposition of a structure blocking layer; (3) heating the substrate during the deposition of a tunnel barrier layer and then cooling it after the deposition of the tunnel barrier layer is complete; (4) heating the substrate after the deposition of a magnetic storage layer on the tunnel barrier layer; and (5) cooling the substrate after the deposition of the magnetic storage layer before a first interlayer of the capping layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.