Inventor · San Diego, CA, US

Lin Xue

31Patents
4h-index
28Co-inventors
59Inventor score

Filing activity: Mar 7, 2014 → Aug 8, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9564582B2 Method of forming magnetic tunneling junctions Electricity 12 Active
US10497858B1 Methods for forming structures for MRAM applications Electricity 9 Active
US10255935B2 Magnetic tunnel junctions suitable for high temperature thermal processing Electricity 7 Active
US10468592B1 Magnetic tunnel junctions and methods of fabrication thereof Electricity 5 Active
US10636964B2 Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy Electricity 4 Active
US10622011B2 Magnetic tunnel junctions suitable for high temperature thermal processing Electricity 3 Active
US11251364B2 Magnetic tunnel junctions suitable for high temperature thermal processing Electricity 2 Active
US10978947B2 Single-inductor multiple-output (SIMO) power converter with a cross-regulation switch Emerging Cross-Sectional Technologies 2 Active
US10756259B2 Spin orbit torque MRAM and manufacture thereof Electricity 2 Active
US11374170B2 Methods to form top contact to a magnetic tunnel junction Electricity 2 Active
US11133460B2 Methods for forming structures with desired crystallinity for MRAM applications Electricity 1 Active
US11069853B2 Methods for forming structures for MRAM applications Electricity 0 Active
US11552244B2 Magnetic tunnel junction structures and methods of manufacture thereof Electricity 0 Active
US10586914B2 Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions Electricity 0 Active
US11374165B2 Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions Electricity 0 Active
US11245069B2 Methods for forming structures with desired crystallinity for MRAM applications Electricity 0 Active
US10924017B2 Techniques for controlling a single-inductor multiple-output switched-mode power supply Electricity 0 Active
US10998496B2 Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy Electricity 0 Active
US12075628B2 Magnetic memory devices and methods of formation Electricity 0 Active
US12402535B2 Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy Electricity 0 Active
US11621393B2 Top buffer layer for magnetic tunnel junction application Electricity 0 Active
US10944050B2 Magnetic tunnel junction structures and methods of manufacture thereof Electricity 0 Active
US12201030B2 Spin-orbit torque MRAM structure and manufacture thereof Electricity 0 Active
US10957849B2 Magnetic tunnel junctions with coupling-pinning layer lattice matching Electricity 0 Active
US11522126B2 Magnetic tunnel junctions with protection layers Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.