Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals
US10473460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | May 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31798
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.