Patent · US Active

Sensor element for thermal anemometry

US10473683B2 · kind B2 · utility

0Cited by
7References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 7, 2017
Grant dateNov 12, 2019
Priority date
Expiry dateSep 28, 2037

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B2203/0127
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A sensor element for thermal anemometry includes a semiconductor substrate and a thin-film diaphragm attached to the semiconductor substrate and having a front side and a rear side. A resistive heating element and a temperature-dependent resistor are attached to the front side of the thin-film diaphragm. In the area of the rear side of the thin-film diaphragm, the semiconductor substrate has a first recess. A silicon layer including a recess which merges with the first recess of the semiconductor substrate is located between the thin-film diaphragm and the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.