Hydrosilylation in semiconductor processing
US10475656B2 · kind B2 · utility
1Cited by
3References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2017 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Dec 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67028
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An example of forming semiconductor devices can include forming a silicon-hydrogen (Si—H) terminated surface on a silicon structure that includes patterned features by exposing the silicon structure to a hydrogen fluoride (HF) containing solution and performing a surface modification via hydrosilylation by exposing the Si—H terminated surface to an alkene and/or an alkyne.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.