Method and structures for heat dissipating interposers
US10475733B2 · kind B2 · utility
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22References
9Claims
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Key dates
| Filing date | Oct 10, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Oct 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect element includes a semiconductor or insulating material layer that has a first thickness and defines a first surface; a thermally conductive layer; a plurality of conductive elements; and a dielectric coating. The thermally conductive layer includes a second thickness of at least 10 microns and defines a second surface of the interconnect element. The plurality of conductive elements extend from the first surface of the interconnect element to the second surface of the interconnect element. The dielectric coating is between at least a portion of each conductive element and the thermally conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.