Semiconductor memory device including stacked body with conductivity and insulating members and method for manufacturing the same
US10475806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Feb 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a substrate with a first insulating film thereon, a wiring in the first insulating film, a first electrode film on the first insulating film, a stacked body on the first electrode film, made of alternating second insulating films and second electrode films, a first insulating member extending in a direction to penetrate the stacked body, a first semiconductor film around the first insulating member and connected to the first electrode film, a third insulating film around the first semiconductor film, a first conductive member extending in the direction to penetrate the stacked body and the first electrode film, and connected to the wiring, and a fourth insulating film around the first conductive member. The fourth insulating film has the same film structure as the third insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.