Patent · US Active

Semiconductor device having a source region with chalcogen atoms

US10475911B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Philip Christoph Brandt · Oberhaching, DE
Andre Rainer Stegner · Unterhaching, DE

Key dates

Filing date	Jan 22, 2019
Grant date	Nov 12, 2019
Priority date	—
Expiry date	Jan 22, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Some embodiments relate to a semiconductor device that includes a body region of a field effect transistor structure formed in a semiconductor substrate between a drift region of the field effect transistor structure and a source region of the field effect transistor structure. The semiconductor substrate includes chalcogen atoms at an atom concentration of less than 1×1013 cm−3 at a p-n junction between the body region and the drift region, and at least part of the source region includes chalcogen atoms at an atom concentration of greater than 1×1014 cm−3. Additional semiconductor device embodiments and corresponding methods of manufacture are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.