Method of forming crystalline oxides on III-V materials
US10475930B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Nov 22, 2016 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Nov 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.