Phase change memory device
US10482954B2 · kind B2 · utility
4Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2017 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Aug 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.