Method for forming thermally stable organosilicon polymer film
US10483099B1 · kind B1 · utility
5Cited by
1,242References
13Claims
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Key dates
| Filing date | Jul 26, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Jul 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thermally stable organosilicon polymer includes: (i) depositing an organosilicon polymer whose backbone is composed of silicon atoms on a substrate using a silicon-containing precursor in a reaction space; and (ii) exposing the organosilicon polymer deposited in step (i) to a hydrogen plasma in the absence of the precursor in the reaction space in a manner increasing Si—H bonds and decreasing C—H bonds in the organosilicon polymer without depositing an organosilicon polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.