Metal-metal direct bonding method
US10483111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2017 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Jan 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80895
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for assembling a first substrate and a second substrate by metal-metal direct bonding, includes providing a first layer of a metal at the surface of the first substrate and a second layer of the metal at the surface of the second substrate, the first and second metal layers having a tensile stress (σi) between 30% and 100% of the tensile yield strength (σe) of the metal; assembling the first and second substrates at a bonding interface by directly contacting the first and second tensile stressed metal layers; and subjecting the assembly of the first and second substrates to a stabilization annealing at a temperature lower than or equal to a temperature threshold beyond which the first and second tensile stressed metal layers are plastically compressively deformed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.