Integrated assemblies and methods of forming integrated assemblies
US10483270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2019 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Feb 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.