Chet E. Carter
51Patents
6h-index
48Co-inventors
68Inventor score
Filing activity: Apr 8, 2011 → May 28, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10236301B1 | Methods of forming an array of elevationally-extending strings of memory cells | Electricity | 47 | Active |
| US10014309B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 30 | Active |
| US10263007B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 11 | Active |
| US10229923B2 | Integrated assemblies and methods of forming integrated assemblies | Electricity | 10 | Active |
| US10283524B1 | Methods of filling horizontally-extending openings of integrated assemblies | Electricity | 9 | Active |
| US10497715B2 | Memory arrays | Electricity | 6 | Active |
| US9006075B2 | Memory cells, semiconductor devices including such cells, and methods of fabrication | Electricity | 4 | Active |
| US10930658B2 | Memory arrays and methods used in forming a memory array | Electricity | 3 | Active |
| US9573809B2 | Method of forming a metal chalcogenide material and methods of forming memory cells including same | Electricity | 2 | Active |
| US10734395B2 | Integrated assemblies and methods of forming integrated assemblies | Electricity | 2 | Active |
| US10157933B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 2 | Active |
| US11737278B2 | Memory arrays and methods used in forming a memory array comprising strings of memory cells | Electricity | 1 | Active |
| US11302708B2 | Memory arrays, and methods of forming memory arrays | Electricity | 1 | Active |
| US10573661B2 | Methods of filling horizontally-extending openings of integrated assemblies | Electricity | 1 | Active |
| US10711649B2 | Compressor casing repair assembly and method | Mechanical Engineering; Lighting; Heating | 1 | Active |
| US9853037B2 | Integrated assemblies | Electricity | 0 | Active |
| US11871566B2 | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US12185545B2 | Memory arrays and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US11239252B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US10483270B2 | Integrated assemblies and methods of forming integrated assemblies | Electricity | 0 | Active |
| US11631684B2 | Integrated assemblies and methods of forming integrated assemblies | Electricity | 0 | Active |
| US8835891B2 | Integrated circuitry, methods of forming memory cells, and methods of patterning platinum-containing material | Electricity | 0 | Active |
| US11937429B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US12200929B2 | Integrated circuitry comprising a memory array comprising strings of memory cells and method used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US10727242B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.