Patent · US Active

Systems and methodologies for vapor phase hydroxyl radical processing of substrates

US10490399B2 · kind B2 · utility

0Cited by

1References

15Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Ian J. Brown · Austin, US
Wallace P. Printz · Austin, US

Key dates

Filing date	Mar 8, 2017
Grant date	Nov 26, 2019
Priority date	—
Expiry date	Jun 17, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/67023
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An apparatus and method for processing substrates. The method includes positioning a substrate within a processing chamber of a substrate processing system. The substrate includes a layer of a carbon-containing material on a working surface of the substrate. The method also includes receiving hydrogen peroxide vapor in a vapor treatment region of the substrate processing system, generating hydroxyl radical vapor by treating the hydrogen peroxide vapor in the vapor treatment region, and directing the hydroxyl radical vapor and remaining hydrogen peroxide vapor to the working surface of the substrate causing the carbon-containing material to be chemically modified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.