Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US10490400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | May 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a technique that includes forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle. The cycle includes non-simultaneously performing: (a) forming a first layer by supplying a precursor gas to the substrate; (b) forming an NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and (c) modifying a part of the NH termination to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate, wherein in (c), an N termination ratio in an upper portion of the concave portion of the pattern is made higher than an N termination ratio in a lower portion of the concave portion of the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.