UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly
US10490402B2 · kind B2 · utility
2Cited by
32References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 22, 2014 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Mar 28, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.