Semiconductor device manufacturing method, substrate processing apparatus and vacuum processing apparatus
US10490405B2 · kind B2 · utility
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2References
10Claims
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Key dates
| Filing date | Mar 2, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Mar 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device manufacturing method including: forming a first mask film composed of a polymer having a urea bond by supplying a raw material to a surface of the substrate for polymerization; forming a second mask inorganic film to be laminated on the first mask film; forming a pattern on the first mask film and the second mask inorganic film and performing an ion implantation on the surface of the substrate; removing the second mask inorganic film after the ion implantation; and removing the first mask film by heating the substrate after the ion implantation and depolymerizing the polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.