Systems and methods for material breakthrough
US10490406B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include selectively removing the modified surface of the first material from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.