Semiconductor device having silicide layers

US10490642B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Rolf Weis · Dresden, DE
• Martin Bartels · Dresden, DE
• Marko Lemke · Dresden, DE
• Stefan Tegen · Dresden, DE

Key dates

• Filing date: Mar 19, 2018
• Grant date: Nov 26, 2019
• Expiry date: Mar 19, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28518
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor substrate having a first side, and a trench structure having a bottom and a sidewall. The bottom has at least first and second bottom portions laterally adjacent to one another. Each bottom portion has a concave shape with a ridge formed between the first and second bottom portions. An insulating material covers the sidewall and first bottom portion of the trench structure while leaving the second bottom portion uncovered. A mesa region extends to the first side of the substrate and forms the sidewall of the trench structure. The device also includes a first silicide layer on a top region of the mesa region, a second silicide layer on the second bottom portion of the trench structure, a first metal layer on and in contact with the first silicide layer, and a second metal layer on and in contact with the second silicide layer.