Semiconductor device and method for fabricating the same

US10490643B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Kuo-Chih Lai · Tainan, TW
• Yun-Tzu Chang
• Wei-Ming Hsiao · Tainan, TW
• Nien-Ting Ho · Tainan, TW
• Shih-Min Chou · Tainan, TW
• Yang Lu · Hefei, CN
• Ching-Yun Chang · Huwei, TW
• Yen-Chen Chen · Danei, TW
• Kuan-Chun Lin · Tainan, TW
• Chi-Mao Hsu · Tainan, TW

Key dates

• Filing date: Nov 24, 2015
• Grant date: Nov 26, 2019
• Expiry date: Dec 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.