Horizontal gate all around and FinFET device isolation

US10490666B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shiyu Sun · Shanghai, CN
• Nam Sung Kim · Hopewell Junction, US
• Naomi Yoshida · Sunnyvale, US
• Theresa Kramer Guarini · San Jose, US
• Sung Won Jun · Seongnam-si, KR
• Vanessa Pena · Leuven, BE
• Errol Antonio C. Sanchez · Tracy, US
• Benjamin Colombeau · San Jose, US
• Michael Chudzik · Mountain View, US
• Bingxi Wood · Cupertino, US

Key dates

• Filing date: Nov 6, 2017
• Grant date: Nov 26, 2019
• Expiry date: Nov 10, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.