Magnetic memory device with sidewall layer containing boron and manufacturing method thereof
US10490732B2 · kind B2 · utility
4Cited by
7References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Nov 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.