Deposition reactor with plasma source
US10494718B2 · kind B2 · utility
0Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Aug 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.