Layout design for fanout patterns in self-aligned double patterning process
US10497566B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Jun 19, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direction; a plurality of linking lines extending in the second direction, the linking lines having a second pitch in the first direction, the second pitch being greater than the first pitch; and a plurality of connection structures connecting respective first conducting lines for current flow to respective linking lines, the connection structures each including a plurality of segments extending in the first direction, segments in the plurality of segments having a transition pitch in the second direction relative to adjacent segments in the plurality of segments greater than or equal to the first pitch, and less than the second pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.