Method for forming multi-layer mask
US10497574B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 21, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Sep 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a spin-on carbon (SOC) layer over a target structure; chemically treating an upper portion of the SOC layer; forming a sacrificial layer over the SOC layer; performing a chemical mechanical polish (CMP) process on the sacrificial layer until reaching the SOC layer, wherein the chemically treated upper portion of the SOC layer has a higher resistance to the CMP process than that of the sacrificial layer; forming a patterned photoresist layer over the SOC layer after the CMP process; and etching the target structure using the patterned photoresist layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.