Method for manufacturing a semiconductor device comprising etching a semiconductor material
US10497583B2 · kind B2 · utility
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1References
18Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 21, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Mar 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to embodiments, a method for manufacturing a semiconductor device includes forming a mask comprising a pattern of inert structures on a side of a first main surface of a semiconductor substrate. A semiconductor layer is formed over the first main surface, and the semiconductor substrate is thinned from a second main surface opposite to the first main surface. Thereafter, a semiconductor region laterally adjoining the inert structures is anisotropically etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.