Method for dicing a substrate with back metal
US10497621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2016 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | May 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.