Semiconductor substrate and semiconductor device
US10497652B1 · kind B1 · utility
0Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 31, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Jul 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate and a semiconductor device are provided in which the substrate includes a plurality of chips. Each of the chips includes at least one array region and at least one periphery region. The semiconductor substrate has a plurality of trenches disposed in the array region and/or the periphery region, wherein a ratio of the depth of the trenches to the thickness of the semiconductor substrate is between 0.001 and 0.008, and the area of all the trenches is between 5% and 90% based on the total area of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.