Patent · US Active

Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone

US10497801B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Elmar Falck · Hohenbrunn, DE
Andreas Haertl · Munich, DE
Manfred Pfaffenlehner · Birkenfeld, DE
Francisco Javier Santos Rodriguez · Villach, AT
Daniel Schloegl · Villach, AT
Hans-Joachim Schulze · Taufkirchen, DE
Andre Rainer Stegner · Unterhaching, DE
Johannes Georg Laven · Taufkirchen, DE

Key dates

Filing date	Jan 25, 2019
Grant date	Dec 3, 2019
Priority date	—
Expiry date	Jan 25, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×1013 cm−3 and 5×1014 cm−3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.