Thick tungsten hardmask films deposition on high compressive/tensile bow wafers
US10504727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Dec 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.